PE1520 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V
(Typ:70mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
General Features
* VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V
(Typ:70mΩ)
* High density cell design for ultr.
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